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采用等离子体增强化学气相沉积(PECVD)方法制备氮化硅(SiNx)和含氟氧化硅(SiOxFy)薄膜,探讨了薄膜材料的最佳制备工艺参数,明确了薄膜光学特性与气体流量、射频功率、反应压强等制备工艺参数的关系;设计并制备了1 064nm高反射膜,并与PVD法制备的Ta_2O_5/SiO_2高反膜进行对比,结果表明,其反射率在99.0%左右时,PECVD法制备的高反膜具有较高的抗激光损伤阈值,约为PVD法的2倍。
Silicon nitride (SiNx) and silicon oxyfluoride (SiOxFy) films were prepared by plasma enhanced chemical vapor deposition (PECVD) method. The optimum preparation parameters of the films were discussed. The optical properties of the films and gas flux, RF power , The reaction pressure and other preparation process parameters; design and preparation of 1 064nm high reflective film, and compared with the PVD method of Ta_2O_5 / SiO 2 high antireflection film, the results show that the reflectivity of about 99.0%, PECVD prepared The high anti-film has a higher anti-laser damage threshold, about 2 times the PVD method.