The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition(MOCVD) were reported. It is found that N-polar Ga N grown on normal
Zr-doped TiO2 was prepared from TiOSO4 and ZrOCO3 by a co-precipitation method using NH3H2O as the precipitation agent. The Zr-doped TiO2 was characterized by X