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当前微波毫米波芯片的引线键合主要是在芯片焊盘和微带线之间实施,当工作频率达到毫米波频段,引线键合的性能对键合线属性及微带线加工精度的敏感度均越来越高,键合操作中键合线长度的差异或微带线加工的误差都可能导致键合性能的快速恶化。提出了一种基于基片集成波导(Substrate Integrated Waveguide,SIW)技术的毫米波引线键合结构,该结构直接使用SIW与芯片焊盘或其他电路进行键合,对比现有微带键合方案,使用提出的基于SIW的键合方案,可以显著降低对结构加工精度的敏感度,同时减少了对介质基片的限制等。设计了无源SIW键合结构,仿真和测试结果表明,基于SIW的键合结构拥有良好的键合性能,相比微带键合结构,降低了传输损耗,降低了对结构尺寸的灵敏度,改善了键合性能。
At present, the wire bonding of a microwave millimeter wave chip is implemented mainly between the chip pad and the microstrip line. When the operating frequency reaches the millimeter wave frequency band, the sensitivity of the wire bonding performance to the bonding wire properties and the processing precision of the microstrip line Are higher and higher, the bonding wire length difference in the bonding operation or microstrip processing errors may lead to rapid deterioration of the bonding performance. A millimeter-wave wire bonding structure based on SIW (Integrated Waveguide) technology is proposed, which uses SIW to bond with chip pads or other circuits directly. Compared with the existing microstrip bonding scheme, Using the proposed SIW-based bonding scheme, the sensitivity to the fabrication accuracy of the structure can be significantly reduced, while the limitations on the dielectric substrate are reduced. The passive SIW bonding structure is designed. The simulation and test results show that the bonding structure based on SIW has good bonding performance. Compared with the microstrip bonding structure, the SIW bonding structure reduces the transmission loss, reduces the sensitivity to structure size and improves Bonding performance.