论文部分内容阅读
以50keV和100keV能量的氢离子注入p型(100)直拉硅单晶薄膜。注入剂量为10~(15)—2×10~(17)H~+/cm~2。试样在HU-1300型超高压透射电子显微镜中进行电子辐照和原位加热动态观察。结果表明在20—300℃温度范围内与未注氢硅相比,注氢硅在相同的电子辐照条件下产生的电子辐照缺陷较少,电子辐照缺陷形成所需的潜伏时间较长。在电子显微镜中加热试样时于190℃开始观察到氢泡,190—220℃范围内氢泡逐渐产生并长大。氢泡呈扁平凸透镜型。对应1×10~(17)H~+/cm~2注入量,200℃下生成氢泡密度为1×10~(17)/m~2。氢泡的形成与硅中氢缺陷的分解有关。
P-type (100) Czochralski silicon thin films were implanted with hydrogen ions at 50 keV and 100 keV energies. The injection dose was 10 ~ (15) -2 × 10 ~ (17) H ~ + / cm ~ 2. The sample was subjected to electron irradiation and in-situ heating dynamic observation in a HU-1300 ultrahigh-pressure transmission electron microscope. The results show that there is less electron irradiation defect under the same electron irradiation condition than that without hydrogen injection in the temperature range of 20-300 ℃, and the latent time required for electron irradiation defect formation is longer . Hydrogen bubbles began to be observed at 190 ° C when the sample was heated in an electron microscope, and hydrogen bubbles gradually grew and grew in the range of 190-220 ° C. Bubble was flat convex lens type. Corresponding to 1 × 10 ~ (17) H ~ + / cm ~ 2 injection, the density of hydrogen bubbles generated at 200 ℃ is 1 × 10 ~ (17) / m ~ 2. The formation of hydrogen bubbles is related to the decomposition of hydrogen defects in silicon.