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基于界面陷阱形成的氢离子运动两步模型和反应过程的热力学平衡假设,推导了金属-氧化物-半导体-场效应晶体管(MOSFET)经历电离辐照后氧化层空穴俘获与界面陷阱形成间关系的表达式.利用初始1/f噪声功率谱幅值与氧化层空穴俘获之间的联系,建立了辐照前的1/f噪声幅值与辐照诱生界面陷阱数量之间的半经验公式,并通过实验予以验证.研究结果表明,由于辐照诱生的氧化层内陷阱通过与分子氢作用而直接参与到界面陷阱的建立过程中,从而使界面陷阱生成数量正比于这种陷阱增加的数量,因此辐照前的1/f噪声功率谱幅值正比于辐照诱生的界面陷阱数量.研究结果为1/f噪声用作MOSFET辐照损伤机理研究的新工具,对其抗辐照性能进行无损评估提供了理论依据与数学模型.
Based on the two-step model of hydrogen ion movement induced by interface traps and the thermodynamic equilibrium assumption of the reaction process, the relationship between the hole trapping of oxide layer and the formation of interface traps after ionizing radiation was deduced in MOSFET (Metal Oxide Semiconductor Field Effect Transistor) The semi-empirical relationship between the amplitude of pre-irradiation 1 / f noise and the number of induced interface traps is established by using the relationship between the initial 1 / f noise power spectrum amplitude and the hole-trapping of oxide layer The results show that the number of interfacial traps is directly proportional to the increase of trap due to the radiation-induced intra-oxide traps directly participating in the establishment of interfacial traps through interaction with molecular hydrogen The amplitude of the 1 / f noise power spectrum before irradiation is proportional to the number of interface traps induced by irradiation.The results show that 1 / f noise is used as a new tool to study the radiation damage mechanism of MOSFET, According to the performance of non-destructive evaluation provides a theoretical basis and mathematical model.