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建立了一种适用于多量子阱和多有源区的多层速率方程模型.通过小信号分析,得到了光子密度、载流子俘获、逃逸和隧穿时间等关键参数对单有源区和隧道再生双有源区垂直腔面发射激光器频率响应特性的影响,并分析了在相同驱动电流下隧道再生双有源区器件调制带宽大于单有源区器件的原因.进一步研究了隧道再生双有源区内腔接触氧化限制型垂直腔面发射激光器的寄生电参数及其寄生电路,对其频率响应进行了模拟分析.
A multi-layer rate equation model suitable for multi-quantum wells and multi-active regions was established.A small-signal analysis was carried out to verify the effect of key parameters such as photon density, carrier trapping, escape and tunneling time on single- Tunneling dual active region vertical cavity surface emitting laser frequency response characteristics and analysis of the same driving current tunneling dual active area device modulation bandwidth is greater than the single active area of the device.Further study of the tunnel regeneration double The parasitic electrical parameters of parasitic circuits and the parasitic circuits of the source cavity exposed to the oxidation limited vertical cavity surface emitting laser were simulated and the frequency response was simulated.