为了设计研制基于载流子色散效应的Si基光子器件,本文针对Si基光子器件的电学结构,利用Silvaco的器件仿真工具Atlas,并根据载流子色散理论,结合有限差分(FD)法,建立了基于pi-n结的电学结构模型。同时,为了提高模型的实际应用水平,采用0.18μm CMOS工艺线制作Si基马赫-曾德尔调制器(MZM),并进行相应的实验验证与分析。本文工作将为从物理层面上优化Si基光子器件设计提供帮助。 In order to design and fabricate Si-based photonic devices based on carrier dispersion effect, this paper aims at the electrical structure of Si-based photonic devices by using Silvaco’s device simulation tool Atlas and based on the carrier dispersion theory combined with finite difference (FD) method Based on the pi-n junction of the electrical structure model. At the same time, in order to improve the practical application of the model, a 0.18μm CMOS technology was used to fabricate a Si-based Mach-Zehnder modulator (MZM), and the corresponding experimental verification and analysis were carried out. The work in this paper will help to optimize the design of Si-based photonic devices on a physical level.