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研究了Si重δ掺杂In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As单量子阱内高迁移率二维电子气系统中的反弱局域效应.研究表明,强的Rashba自旋轨道相互作用来源于量子阱高的结构反演不对称.高迁移率系统中,粒子的运动基于弹道输运而非扩散输运.因此,旧的理论模型不能用于拟合实验结果.由于最新的模型在实际拟合中过于复杂,一种简单可行的近似用于处理实验结果,并获得了自旋分裂能Δ0和自旋轨道耦合常数α两个重要的物理参数.该结果与对纵向电阻的Shubnikov-deHaas—SdH振荡分析获得的结果一致.高迁移率系统中的反弱局域效应研究表明,发展有效的反弱局域理论模型,对于利用Rashba自旋轨道相互作用来设计自旋器件尤为重要.
The anti-weak local effect in high mobility two-dimensional electron gas system of Si heavy delta-doped In0.52Al0.48As / In0.53Ga0.47As / In0.52Al0.48As single quantum wells has been studied. The results show that strong Rashba The spin-orbit interaction is derived from asymmetric structural inversion with high quantum well. In high-mobility systems, particle motion is based on ballistic transport rather than diffusion transport, so the old theoretical model can not be used to fit the experimental results. Since the latest model is too complicated in the actual fitting, a simple and feasible approximation is used to deal with the experimental results, and two important physical parameters of spin-splitting energy Δ0 and spin-orbit coupling constant α are obtained. Longitudinal resistance is consistent with Shubnikov-deHaas-SdH oscillation analysis.Research on the anti-weak local effect in high mobility system shows that the development of an effective anti-weakness theory model of the local area for the use of Rashba spin orbit interaction to design self Rotating device is particularly important.