射频磁控反应溅射生长AlN薄膜

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用射频磁控反应溅射方法,在高纯N2、Ar(纯度均为99.999%)的气氛中,以高纯Al为靶材,成功地制备了AlN薄膜.研究了不同气体组分、不同衬底温度对薄膜结晶性的影响.发现退火能使薄膜的结晶性得到改善,在退火后的样品中得到了室温蓝紫色阴极射线发光 By RF magnetron reactive sputtering method, AlN film was successfully prepared by using high purity Al as target material in high purity N2 and Ar (purity 99.999%). The effects of different gas compositions and substrate temperatures on the crystallinity of the films were investigated. It was found that the annealing can improve the crystallinity of the film, and at room temperature blue-violet cathodoluminescence was obtained in the annealed sample
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