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本文用热力学方法计算得出了H_2气氛中微量H_2O和O_2在硅衬底上产生SiO_2的临界值.计算结果对从事低温硅外延生长有一定参考价值.
In this paper, the critical value of SiO_2 generated on silicon substrate by H_2O and O_2 in H_2 atmosphere was calculated by thermodynamic method. The calculation results have certain reference value for low-temperature silicon epitaxial growth.