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本文提出一种呈现类五极管特性的新的垂直砷化镓场效应晶体管(V-GaAsFET),并用反应离子刻蚀(RIE)和MO-CVD技术相结合的方法制作出实验性的器件。这种器件独有的特征是一种埋入GaAs单晶里面的栅状介质/金属/介质栅的应用。对这种新器件的直流特性和标准穿透基区晶体管(PBT)的直流特性进行了对比。对于期望由这种结构所改善的器件特性进行了详细的讨论。
In this paper, we propose a novel vertical GaAs FET with quasi- pentode characteristics and fabricate an experimental device by a combination of reactive ion etching (RIE) and MO-CVD. A unique feature of this device is the use of a gate dielectric / metal / dielectric gate embedded in a GaAs single crystal. The DC characteristics of this new device are compared to the DC characteristics of a standard Penetration Base Transistor (PBT). The device characteristics expected to be improved by this structure are discussed in detail.