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采用射频(RF)磁控溅射单质金属铜(Cu)靶,在O2和Ar的混合气氛下制备了Cu2O薄膜,并在N2气氛下对预沉积的Cu2O薄膜进行快速光热退火(RTA)处理,研究了衬底温度及退火温度对Cu2O薄膜的生长行为、物相结构、表面形貌及光学性能的影响。结果表明,衬底温度在300℃以下预沉积的Cu2O薄膜为非晶薄膜,退火处理对Cu2O薄膜的结晶行为有明显影响,在N2气氛下对Cu2O薄膜进行退火处理不影响薄膜的物相结构;预沉积和退火Cu2O薄膜在650nm以下波长范围内均有较强吸收,吸收强度随退火温度的增加而增强,薄膜在400nm以下波长范围内出现两个由缺陷引起的中间带(IB)吸收行为,快速热退火处理不能减少或消除薄膜沉积过程中形成的缺陷态;退火处理影响薄膜的光学带隙Eg,预沉积薄膜经600℃退火处理,Eg值增大了0.26eV。
The Cu2O thin films were prepared by radio frequency (RF) magnetron sputtering of single-metal copper (Cu) target under the mixed atmosphere of O2 and Ar. The pre-deposited Cu2O thin films were subjected to rapid thermal annealing (RTA) , The effects of substrate temperature and annealing temperature on the growth behavior, phase structure, surface morphology and optical properties of Cu2O films were investigated. The results show that the Cu2O films pre-deposited at substrate temperatures below 300 ℃ are amorphous films, and the annealing treatment has a significant effect on the crystallization behavior of Cu2O films. The annealing of Cu2O films in N2 atmosphere does not affect the phase structure of Cu2O thin films. The pre-deposited and annealed Cu2O films have strong absorption in the wavelength range below 650nm, and the absorption intensity increases with the increase of the annealing temperature. The absorption band of the intermediate layer (IB) The rapid thermal annealing treatment can not reduce or eliminate the defect state formed during the film deposition. The annealing treatment affects the optical band gap Eg of the film, and the pre-deposited film annealed at 600 ° C increased the value of Eg by 0.26 eV.