阴离子对铜化学机械抛光的影响

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在化学机械抛光过程中,抛光液的组成对抛光速率和表面质量有重要影响。利用自制抛光液,研究了在过硫酸铵体系抛光液中不同阴离子(硝酸根离子、溴离子、氯离子)对抛光速率的影响;采用动电位极化扫描技术对各抛光液在金属表面的成膜性能进行分析。结果表明,硝酸根离子的加入加快了阳极溶解反应,低浓度硝酸根离子的加入对抛光速率影响的波动性较大,随着浓度的增加抛光速率逐渐趋于初始值;随着氯离子(≥1mmol/L)或溴离子浓度的增加,抛光液的氧化性能降低,抛光速率不断降低;当溴离子浓度为0.1mmol/L时,Icorr值最小,抛光时对金属铜表面腐蚀程度较小。 In chemical mechanical polishing, the composition of the polishing fluid has a significant effect on the polishing rate and surface quality. The effects of different anions (nitrate, bromide and chloride) on the polishing rate in the ammonium persulfate system polishing solution were studied by using the homemade polishing solution. The polishing rate of the polishing solution on the metal surface Membrane performance analysis. The results show that the nitrate ion accelerates the anodic dissolution reaction. The fluctuation of polishing rate is affected by the addition of low concentration of nitrate ions. The polishing rate tends to the initial value as the concentration increases. With the increase of chloride ion (≥ 1mmol / L) or bromine ion concentration, the oxidation performance of the polishing solution decreased, the polishing rate decreased. When the bromide ion concentration was 0.1mmol / L, the Icorr value was the smallest, and the corrosion on the copper metal surface was less.
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