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在微电子器件的制备中,用等离子腐蚀金属、半导体材料和介质是一项被认定了的工艺。最早研究等离子腐蚀工艺是前10年左右的事;而现在,等离子已被广泛地用于加工硅、二氧化硅、氮化硅、钽化物、钨和玻璃等物质。近两年来,其发展更为迅速。新的进展包含有能对付新材料的新工艺和性能良好的新设备。本文对这些新进展作了综述和详细说明。
In the preparation of microelectronic devices, plasma etching of metals, semiconductor materials and media is a proven process. The earliest research on plasma etching was the first 10 years or so; now, plasma has been widely used to process silicon, silicon dioxide, silicon nitride, tantalum, tungsten and glass. In the past two years, its development has been even faster. New developments include new processes that deal with new materials and new, well-performing equipment. This article reviews and details these new developments.