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本文对SiH_4-N_2系PECVD氮化硅-硅界面陷阱进行了研究.结果表明:MNS结构的C-V特性有滞后效应,滞后宽度随测试条件而变化;界面陷阱密度随淀积条件变化。
The results show that the C-V characteristics of the MNS structure have a hysteresis effect, and the hysteresis width varies with the test conditions. The interface trap density varies with the deposition conditions.