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用Mo-CVD技术已研制了几种特种半导体材料,(1)注氧GaAs衬底上生长GaAs:根据注氧剂量的不同,已获得各种结晶的GaAs外延层。这种材料将在选择外延中起重要作用;(2)Mo/Si衬底上生长GaAs:由于面积大,价格低和结晶性能较好,GaAs/Mo/Si材料可能成为有前途的太阳电池材料;(3)在GaAs衬底上生长CdTe:CdTe/GaAs是一种复合材料,它有望代替CdTe单晶成为HgCdTe外延的代用衬底。这三种材料的电性和结晶性能已用C-V,I-V,S。E。M和电子衍射以及用x射线能谱进行了研究和测量。
Several specialty semiconductor materials have been developed using Mo-CVD technology. (1) GaAs growth on oxygen-implanted GaAs substrates: Various crystalline GaAs epitaxial layers have been obtained, depending on the amount of oxygen injection. This material will play an important role in the choice of epitaxy; (2) GaAs on Mo / Si substrates: GaAs / Mo / Si materials may be promising solar cell materials due to their large area, low cost and good crystallinity ; (3) Growth of CdTe on GaAs Substrate: CdTe / GaAs is a kind of composite material, which is expected to replace HgCdTe epitaxy instead of CdTe single crystal. The electrical and crystallization properties of these three materials have been used C-V, I-V, S. E. M and electron diffraction as well as X-ray energy spectra were studied and measured.