一、前言对于半导体原料的Ga,要求纯度很高。为此用火花离子源质谱分析法,快速分析Ga中微量杂质含量。由于Ga中Bi、Cd、Pb、Sn等重金属的定量下限较高,所以对7N级Ga的分析,质谱法是不合适的。现仅就上述四种元素用无焰原子吸收光谱分析法探讨之,光谱法与质谱分析法相比,光谱法测得定量下限低于质谱法。现将试验结果报告如下。 First, the foreword Ga for semiconductor raw materials, demanding high purity. For this purpose, spark ion source mass spectrometry was used to analyze the trace impurities in Ga rapidly. Due to the high quantitative limit of Bi, Cd, Pb, Sn and other heavy metals in Ga, mass spectrometry is not suitable for the analysis of 7N Ga. Only the above four elements were investigated by flameless atomic absorption spectrometry. Compared with mass spectrometry, the lower limit of quantification by spectrometry was lower than that by mass spectrometry. The test results are reported below.