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通过理论分析和实验证明了注入光敏器件并不是一种MOS场效应结构 ,对文献[9]中得出的不同的结论和所讨论的问题阐述了自已的见解
Through theoretical analysis and experiments, it is proved that the photosensitive device is not a MOS field-effect structure, and the different conclusions and problems discussed in [9]