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Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission electron microscopy(HRTEM), scanning electron microscopy(SEM), atomic force microscopy(AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_(0.82)Ga_(0.18)As/InP heterostructure, the In_xGa_(1-x)As buffer layer was grown. The residual strain of the In_(0.82)Ga_(0.18)As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium(In) content In_(0.82)Ga_(0.18)As epitaxial layer has significant influence on the carrier concentration.
Microstructure and misfit dislocation behavior in In_xGa_ (1-x) As / InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were analyzed by high resolution transmission electron microscopy (HRTEM) In force microscopy (AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_ (0.82) Ga_ (0.18) As / InP heterostructure, the In_xGa_ (1-x) As buffer layer was grown. Further, the periodic pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium (In) content In_ (0.82) Ga_ (0.18) As epitaxial layer has significant influence on the carrier concentration.