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提出一种新的基于硫化物表面处理的InP/GaAs低温晶片键合技术.在360℃的退火温度下,获得了1.2MPa的键合强度.基于这种低温键合技术,可将外延生长在InP衬底上的In0.53Ga0.47As/InP多量子阱(MQW)键合并转移到GaAs衬底上.X射线衍射表明量子阱的结构未受键合过程的影响.光致发光谱分析表明键合后量子阱的晶体质量略有改善.电流电压特性的测试表明n-InP/n-InP的键合界面具有良好的导电特性;在n-InP/n-GaAs的键合界面存在着电荷势垒,这主要是由于键合界面存在GaAs氧化物薄层所致.
A new sulfide-based InP / GaAs cryogenic wafer bonding technology was proposed, and a bonding strength of 1.2 MPa was obtained at an annealing temperature of 360 ° C. Based on this low-temperature bonding technique, epitaxial growth was performed at The In0.53Ga0.47As / InP multiple quantum well (MQW) on the InP substrate is bonded and transferred onto the GaAs substrate.The X-ray diffraction shows that the structure of the quantum well is unaffected by the bonding process.The photoluminescence spectroscopy shows that the bond The crystal quality of the quantum well is slightly improved after the coalescence.The test results of the current and voltage show that the bonding interface of n-InP / n-InP has good electrical conductivity and the charge potential exists at the bonding interface of n-InP / n-GaAs This is mainly due to the presence of a GaAs oxide layer at the bonding interface.