测量了TGS、ATGS、LiTaO-3材料的电滞回线、介电常数、正切损耗和热电系数,以及采些电学参数随温度的变化,并对测量结果作了初步分析。平面生长的ATGS的丙氨酸掺杂量在不同的生长层中有明显的改变,但在同一层中基本均匀,有利于作热电摄象管靶面。TGS的矫顽场随外加电场的变化速率而改变,所以把铁电材料作为电子计算机中的记忆元件有一定困难。 The hysteresis loops, dielectric constant, tangential loss and pyroelectric coefficient of TGS, ATGS and LiTaO-3 materials were measured, and the change of some electrical parameters with temperature was also measured. The measurement results were analyzed preliminarily. The alanine doping amount of ATGS in plane growth changed obviously in different growth layers, but it was basically uniform in the same layer, which was beneficial to the target of thermoelectric tube. The coercive field of TGS changes with the rate of change of the applied electric field, so there is some difficulty in using ferroelectric materials as memory elements in electronic computers.