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提出一种利用浅槽隔离(STI)技术的超薄顶硅层绝缘体上硅(SOI)基新颖阳极快速横向绝缘栅双极型晶体管(LIGBT),简称STI-SOI-LIGBT。该新结构器件整体构建在顶硅层厚度为1μm、介质层厚度为2μm的SOI材料上,其阳极采用STI和p+埋层结构设计。新器件STI-SOI-LIGBT的制造方法可以采用半导体工艺生产线常用的带有浅槽隔离工艺的功率集成电路加工技术,关键工艺的具体实现步骤也进行了讨论。器件+电路联合仿真实验说明:新器件STISOI-LIGBT完全消除了正向导通过程中的负微分电阻现象,与常规结构LIGBT相比,正向压降略微增加6%,而关断损耗大幅降低86%。此外,对关键参数的仿真结果说明新器件还具有工艺容差大的设计优点。新器件STI-SOI-LIGBT非常适用于SOI基高压功率集成电路。
An ultrathin top-silicon-on-insulator (SOI) -based novel anode rapid lateral insulated gate bipolar transistor (LIGBT), referred to as STI-SOI-LIGBT, is proposed by using shallow trench isolation (STI) The new structure device is constructed as a whole on SOI material with a top silicon layer thickness of 1μm and a dielectric layer thickness of 2μm, and the anode is designed with an STI and p + buried layer structure. The new device STI-SOI-LIGBT manufacturing method can be used in the semiconductor process line commonly used shallow trench isolation process power integrated circuit processing technology, the key process of the specific implementation steps are also discussed. Device + Circuit Simulation Test Description: The new device STISOI-LIGBT completely eliminates the phenomenon of negative differential resistance in the forward conduction process, compared with the conventional structure LIGBT, the forward voltage drop slightly increased 6%, while the turn-off loss significantly reduced 86 %. In addition, the simulation results of the key parameters show that the new device also has the design advantage of large process tolerance. The new device STI-SOI-LIGBT is ideal for SOI-based high-voltage power ICs.