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在热丝化学汽相沉积(HFCVD)法制备SiC薄膜过程中,研究不同的N掺杂下制备样品的光敏特性.对薄膜在室温和较高温度(410℃)下进行光敏特性测试,结果表明,薄膜的制备工艺参量对其光敏特性有较大影响;较高温度下其敏感特性和室温下测试的结果大体一致;在合适条件下制备的薄膜对不同波长的光有较好的敏感特性.可以看出,SiC薄膜在研究高温光敏器件领域具有很好的应用前景.
During the preparation of SiC thin films by hot filament chemical vapor deposition (HFCVD), the photosensitive properties of samples prepared under different N doping were investigated. The results of the photosensitive properties of the films at room temperature and higher temperature (410 ℃) , The preparation parameters of the films have a great influence on their photosensitive properties; the sensitivity at higher temperatures is generally consistent with the results at room temperature; the films prepared under the proper conditions have better sensitivity to different wavelengths of light. It can be seen that SiC film has good application prospect in the field of researching high temperature photosensitive devices.