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运用量子电容谱测量技术，在窄禁带半导体材料ＩｎＳｂ和ＨｇＣｄＴｅ价带和导带中分别发现了两个共振缺陷态．根据建立的实验模型研究了这些共振缺陷态的特性
Using quantum capacitance spectroscopy, two resonant flaw states were found in the valence band and the conduction band of the narrow bandgap semiconductor materials InSb and HgCdTe, respectively. According to the established experimental model, the characteristics of these resonance states are studied