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最近对细线工艺的改进产生了沟道长度为0.2～0.8μm的硅金属氧化物半导体场效应管(Si-MOSFET)。我们测量了这些管子的低频噪声,发现比类似的砷化镓金属肖特基场效应管(GaAs-MESFET)的噪声小。有关FET噪声的理论研究和在45Mb/s的实验结果表明,在混合的光电放大器电路中,Si-MOSFET可与GaAs-MESFET相匹比较。
Recent improvements to thin wire processes have resulted in silicon metal oxide semiconductor field effect transistors (Si-MOSFETs) with channel lengths of 0.2-0.8 μm. We measured the low frequency noise of these tubes and found less noise than similar GaAs-MESFETs. Theoretical studies on FET noise and experimental results at 45 Mb / s show that Si-MOSFETs can be compared to GaAs-MESFETs in a hybrid opto-amplifier circuit.