Inhibition of the toxic byproduct during photocatalytic NO oxidation via La doping in ZnO

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It is of a great challenge to develop semiconductor photocatalysts with potential possibilities to simultaneously enhance photocatalytic efficiency and inhibit generation of toxic intermediates. In this study, we developed a facile method to induce the La doping and cationic vacancie (VZn) on ZnO for the highly efficient complete NO oxidation. The photocatalytic NO removal efficiency increases from 36.2%to 53.6%. Most importantly, a significant suppressed NO2 production also has been realized. According to the DFT calculations, ESR spectra and in situ FTIR spectra, the introduction of La3+induce the redistribution of chargecarriersinLa-ZnO,whichpromotetheproductionof · O2-andleadtotheformationofVZnforthe formation of · OH, contributing to the complete oxidation of NO to nitrate. Besides, the conversion pathway of photocatalytic NO oxidation has been elaborated. This work paves a new way to simultaneously realize the photocatalytic pollutants removal and the inhibition of toxic intermediates generation for efficient and safe air purification.
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