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本文概述了近年来 In As P/ In Ga P应变补偿量子阱的研究与进展 ,从材料结构、界面质量、器件、存在问题及应用前景等方面对其进行了较为详细的叙述。界面质量的研究表明 ,In P薄层的引入有助于改善界面的质量 ,提高器件的性能 ,不失为继续研究的方向。
In this paper, the research and development of In As P / In Ga P strain compensated quantum wells in recent years are summarized. The material structure, interface quality, devices, existing problems and application prospects are also described in detail. The research of interface quality shows that the introduction of In P thin layer can help to improve the quality of the interface and improve the performance of the device, which will continue to be the research direction.