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研究了GaN基p-i-n(p-AlGaN/i-GaN/n-GaN)结构紫外探测器的漏电机理.实验发现,在位错密度几乎相同的情况下,基于表面有较高密度的V形坑缺陷材料制备的器件表现出较高的反向漏电.进一步的SEM测试发现,这种V形坑穿透到有源区i-GaN、甚至n-GaN层.在制备p-AlGaN电极时,许多金属会落在V形坑中,从而与i-GaN形成了肖特基接触,有些甚至直接和n-GaN形成欧姆接触.正是由于并联的肖特基接触和欧姆接触的存在导致了漏电的增加.
The leakage mechanism of GaN-based pin (p-AlGaN / i-GaN / n-GaN) UV detector was studied. The experimental results show that the V-shaped pit defect with higher density on the surface is obtained when the dislocation density is almost the same, Materials prepared by the device showed higher reverse leakage .Further SEM test found that this V-shaped pit penetrates to the active area i-GaN, and even n-GaN layer in the preparation of p-AlGaN electrode, many metals Will fall into the V-shaped pit to form Schottky contacts with the i-GaN and some even directly make ohmic contact with the n-GaN. It is the presence of parallel Schottky contacts and ohmic contacts that results in increased leakage .