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采用常压金属有机化学汽相沉积 (MOCVD)技术以Al2 O3 为衬底在GaN膜上生长了InxGa1-xN薄膜。以卢瑟福背散射 /沟道技术、光透射谱、光致发光光谱对InxGa1-xN/GaN/Al2 O3 样品进行了测试。研究了InxGa1-xN薄膜的弯曲因子及斯托克斯移动。结果表明 ,采用光透射谱、光致发光光谱得到的InxGa1-xN薄膜的禁带宽度一致 ,InxGa1-xN薄膜并不存在斯托克斯移动。InxGa1-xN薄膜的In组分分别为 0 .0 4 ,0 .0 6 ,0 .2 4 ,0 .2 6时 ,其弯曲因子分别为 3.4 0 ,2 .36 ,1.82 ,3.70。随In组分变化 ,InxGa1-xN薄膜的弯曲因子的变化并没有一定的规律 ,表明InxGa1-xN薄膜的禁带宽度随In组分的变化关系复杂。
The InxGa1-xN thin films were grown on GaN films by atmospheric pressure metal-organic chemical vapor deposition (MOCVD) using Al2 O3 as substrate. The InxGa1-xN / GaN / Al2 O3 samples were tested by Rutherford backscattering / channeling technique, light transmission spectrum and photoluminescence spectrum. The bending factor and Stokes shift of InxGa1-xN films were investigated. The results show that the band gap of InxGa1-xN thin films is the same with that of the InxGa1-xN thin films. The InxGa1-xN thin films have no Stokes shift. The InxGa1-xN thin films have bending constants of 3.4 0, 2.36, 1.82 and 3.70 respectively when the In composition of the InxGa1-xN thin film is respectively 0.040, 0.06, 0.224, 0.226. The variation of the bending factor of the InxGa1-xN film has no regularity as the In composition changes, indicating that the bandgap of the InxGa1-xN film has a complicated relationship with the change of the In composition.