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本文依据等离子体化学气相沉积法(PCVD)制备SnO_2导电薄膜的过程,提出一种数学模型。通过数值计算,讨论了沉积的关键参量—活性粒子沉积速率与过程参数(气压、温度等)。的相互关系,对结果作了初步分析并与实验进行了比较。
This paper presents a mathematical model based on the process of preparing the SnO_2 conductive thin film by plasma chemical vapor deposition (PCVD). Through numerical calculation, the key parameters of deposition - active particle deposition rate and process parameters (air pressure, temperature, etc.) are discussed. Of the relationship between the results of a preliminary analysis and compared with the experiment.