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运用系宗蒙特卡罗法计算了强THz场作用下,n型掺杂的GaAs和InSb中随时间变化的散射机制以及载流子非线性动力学演变,获取了电子散射至卫星谷并弛豫回原能谷的时间信息,并追踪描绘了载流子瞬态增加的过程,结果同时显示了强场作用下谷间散射是GaAs中的主要散射机制,而碰撞电离则是InSb中的关键因素.此外进一步讨论了这两种机制对于相关物理量:平均动能、平均速度、材料的电导率的影响,结果说明这两种机制导致了非线性效应并在两种材料中起到相反的作用,InSb中碰撞电离的响应时间比GaAs中谷间散射的响应时间更长.该研究结果在THz调制领域有一定的指导意义.
By using the Monte Carlo method, the scattering mechanism of n-type doped GaAs and InSb and the nonlinear dynamic evolution of charge carriers under strong THz field are calculated, and the electron scattering into the satellite valley and relaxation Back to the original valley of the time information, and traces depicting the carrier transient increase in the process, the results also show that the strong field under the scattering of GaAs is the main scattering mechanism, and the collision ionization is the key factor in InSb. In addition, the effects of these two mechanisms on the related physical quantities: average kinetic energy, average velocity and conductivity of the materials are further discussed. The results show that these two mechanisms lead to non-linear effects and play an opposite role in the two materials. InSb The response time of collision ionization is longer than the response time of the interglastible scattering in GaAs.The results of this study are of guiding significance in the field of THz modulation.