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本文叙述了n-GaAs/AuGeNi和P-GaAs/Au-Zn的比接触电阻随合金温度的变化规律,研究了热处理气氛(H_2或N_2气氛中)对合金表面形貌的影响。结果表明:n-GaAs/AuGeNi和n-GaAs/AuGeNi/Au具有相同的比接触电阻。当热处理在N_2气流中进行时,合金的表面形貌呈细粒状。在P-GaAs/Au-Zn中,比接触电阻随合金化温度的增加而缓慢地降低。当合金温度为550℃时,合金的表面形貌呈现明显的缩球。这一方法已应用到GaAs-GaAlAs双异质结发光两极管的制备工艺中,并制得了串联电阻为1-2Ω的器件。本文讨论了接触金属与GaAs在热处理过程中的相互作用问题。
In this paper, the variation of specific resistance of n-GaAs / AuGeNi and P-GaAs / Au-Zn with respect to the alloy temperature was investigated. The effect of heat treatment atmosphere (H 2 or N 2 atmosphere) on the surface morphology of the alloy was investigated. The results show that n-GaAs / AuGeNi and n-GaAs / AuGeNi / Au have the same specific contact resistance. When the heat treatment is carried out in an N 2 gas stream, the surface morphology of the alloy is finely grained. In P-GaAs / Au-Zn, the specific contact resistance slowly decreases with increasing alloying temperature. When the alloy temperature is 550 ℃, the surface morphology of the alloy shows obvious shrinkage. This method has been applied to GaAs-GaAlAs double heterostructure light-emitting diodes in the preparation process, and prepared a series resistance of 1-2Ω devices. This article discusses the contact metal and GaAs in the heat treatment process of interaction problems.