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氮化硅陶瓷作为高温结构材料引起人们重视已有30多年历史,但是至今人们对热压氮化硅的α→β相变的精确本质未能完全了解.由于制备高质量的氮化硅陶瓷通常必须有氧化物添加剂参与,因而研究添加剂离子在氮化硅中的扩散行为,对于进一步了解α→β相变过程是很必要的.
Silicon nitride ceramics have attracted people’s attention for more than 30 years as a high-temperature structural material, but so far the exact nature of the α → β phase transition of hot-pressed silicon nitride has not been completely understood. Since high-quality silicon nitride ceramics are usually prepared, Oxide additives must be involved. Therefore, studying the diffusion behavior of additive ions in silicon nitride is necessary to further understand the α → β phase transition.