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在ＡｌＮ基片上采用Ａｇ－２０％Ｐｄ浆料实现了厚膜金属化布线。膜层的附着力、表面电阻、可焊性及耐焊料的腐蚀能力都不亚于Ａｌ２Ｏ３基片上的情况。在烧结过程中，熔化的玻璃料向基片表面流动富集，而导体粉料变成网状结构。结果，界面附近的玻璃与导体层之间形成“交联”结构，而与基极之间形成“镶嵌”结构。为了获得这种附着性能良好的界面结构，玻璃料应具有５００～６００℃合适的软化点，且能润湿金属及ＡｌＮ基片。
Thick-film metalized wiring is achieved using Ag-20% Pd paste on an AlN substrate. Film adhesion, surface resistance, solderability and solder corrosion resistance are as good as the case of Al2O3 substrate. During sintering, the molten glass frit flows to the surface of the substrate, and the conductive powder becomes a net-like structure. As a result, a “cross-linked” structure is formed between the glass and the conductor layer in the vicinity of the interface, and a “damascene” structure is formed between the glass and the base. In order to obtain such an interface structure with good adhesion, the glass frit should have a suitable softening point of 500 to 600 ° C and be able to wet the metal and the AlN substrate.