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介绍了GaN基HEMT微加速度计结构的设计、加工及测试过程,并对结果做出了分析。通过喇曼测试与ANSYS仿真软件相结合的方式进行应力测试分析,利用安捷伦4156C测试仪对GaN基HEMT进行不同应力状态及不同温度下IDS-VDS特性测试,并通过相关测试数据计算分析GaN基HEMT的压阻系数及其变化规律。结果表明:常温下GaN基HEMT的等效压阻系数为(2.47±0.04)×10-9Pa-1,高于Si的压阻系数(7.23±3.62)×10-10Pa-1。同时测试了HEMT在-40~50℃的输出特性,实验结果表明,HEMT饱和源漏电流随着温度的升高而下降。压阻系数具有负温度系数,且压阻系数随着温度的升高以226TPa-1/℃的速率减小。
The design, fabrication and testing of GaN-based HEMT micro-accelerometer are introduced, and the results are analyzed. Through the combination of Raman test and ANSYS simulation software, the stress test and analysis were carried out. The Agilent 4156C tester was used to test the GaN-based HEMT under different stress states and IDS-VDS characteristics under different temperatures. The GaN-based HEMT Of the piezoresistive coefficient and its variation. The results show that the equivalent piezoresistance coefficient of GaN-based HEMT is (2.47 ± 0.04) × 10-9Pa-1 at room temperature, which is higher than that of Si (7.23 ± 3.62) × 10-10Pa-1. The output characteristics of HEMT at -40 ~ 50 ℃ are also tested. The experimental results show that the saturation source-drain current of HEMT decreases with the increase of temperature. The piezoresistive coefficient has a negative temperature coefficient, and the piezoresistive coefficient decreases at a rate of 226TPa-1 / ° C as the temperature increases.