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TriQuint半导体公司推出四款具有卓越增益和效率,并且非常耐用的新氮化镓(GaN)HEMT射频功率晶体管产品。TriQuint的氮化镓晶体管可使放大器的尺寸减半,同时改进效率和增益。这些新的氮化镓晶体管可在直流至6 GHz宽广的工作频率上提供30-37W
TriQuint Semiconductor Introduces Four New GaN HEMT RF Power Transistors Featuring Superior Gain and Efficiency, and Extremely Durable. TriQuint’s gallium nitride transistors halve the size of the amplifier while improving efficiency and gain. These new gallium nitride transistors provide 30-37W at a wide operating frequency from DC to 6 GHz