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本文根据对反应室中气流模型的研究,提出了一种新的多层生长技术.它是采用在衬底区局部隔离的办法进行双室工作的.因而和文献上报导的“双室法”相比,它只需要一个In源和一路PCl_3,明显地具有装置简单、工艺灵活、节省原材料而又易于获得陡峭的掺杂分布;该技术克服了单室支路掺杂法具有杂质存贮效应的缺点,减小了过渡区宽度,适用于生长各种类型的多层外延材料.采用该技术生长的材料研制的耿氏二极管,最佳性能为:在58.3GHz下输出147mW,效率2.54%.
Based on the study of the gas flow model in the reaction chamber, a new multi-layer growth technique is proposed in this paper, which is based on the local isolation in the substrate region. Therefore, compared with the “double chamber method” reported in the literature, In contrast, it only needs one In source and one PCl_3, which obviously has the advantages of simple installation, flexible process, easy material saving and steep doping distribution. This technology overcomes the impurity storage effect of single-chamber branch doping method , Which reduces the width of the transition region and is suitable for the growth of various types of multilayer epitaxial materials.The Gunn diode developed by using this technology has the best performance of 147mW at 58.3GHz and an efficiency of 2.54%.