论文部分内容阅读
采用分子束外延(MBE)法,在优化Ge衬底退火工艺的基础上,通过对比在(001)面偏<111>方向分别为0°、2°、4°和6°的Ge衬底上生长的GaAs薄膜,发现当Ge衬底的偏角为6°时有利于高质量GaAs薄膜的生长;通过改变迁移增强外延(MEE)的生长温度,发现在GaAs成核温度为375℃时,可在6°偏角的Ge衬底上获得质量最好的GaAs薄膜。通过摸索GaAs/Ge衬底上InAs量子点的生长工艺,实现了高效的InAs量子点光致发光,其性能接近GaAs衬底上直接生长的InAs量子点的水平。
On the basis of optimizing the annealing process of Ge substrate by MBE method and comparing with the Ge substrate with 0 °, 2 °, 4 ° and 6 ° in the direction of <111> in the (001) plane, GaAs thin films grown on GaAs substrate. It was found that GaAs thin film growth was facilitated when the tilt angle of Ge substrate was 6 °. By changing the growth temperature of MEE, it was found that when GaAs nucleation temperature is 375 ℃, The best quality GaAs film was obtained on a 6 ° off-angle Ge substrate. By exploring the growth process of InAs quantum dots on GaAs / Ge substrate, high efficiency InAs quantum dots photoluminescence is achieved, which is close to that of GaAs substrates grown directly on InAs quantum dots.