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采用电子回旋共振等离子体化学气相淀积(ECR-CVD)法,以C4F8和CH4为源气体制备了非晶氟化碳(a-C:F)薄膜.X射线电子能谱(XPS)和傅里叶变换红外光谱(FTIR)分析表明,a-C:F薄膜退火后厚度减小是由于位于a-C:F薄膜交联结构末端的C—C和CF3结合态的热稳定性较差,导致退火时容易生成气态挥发物造成的.a-C:F膜介电常数在300℃氮气气氛中退火后由于电子极化增大和薄膜密度增加而上升,界面态陷阱密度从(5—9)×1011eV-1·cm-2降至(4—6)×1011eV-1·cm-2.a-C:F薄膜导电行为在低场强区域呈现欧姆特性,在高场强区域符合Poole-Frankel机理.非定域π电子在带尾形成陷阱且陷阱能量在退火后降低,从而使更多陷阱电子在场增强热激发作用下进入导带并引起电流增大.
Amorphous carbon fluoride (aC: F) films were prepared by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using C4F8 and CH4 as source gases. X-ray photoelectron spectroscopy (XPS) FTIR analysis showed that the decrease of the thickness of the aC: F thin film annealed was due to the poor thermal stability of the C-C and CF3 bound states at the end of the cross-linked aC: F film, resulting in the formation of a gaseous state during annealing Volatiles.aC: The dielectric constant of F-film increased after annealing at 300 ℃ in nitrogen atmosphere due to the increase of electron polarization and the increase of the density of the interface. The trap density of interface state increased from (5-9) × 1011eV-1 · cm-2 To (4-6) × 1011eV-1 · cm-2. The conduction behavior of the films shows ohmic behavior in the low field and Poole-Frankel mechanism in the high field. The delocalized π- A trap is formed and the trap energy decreases after annealing, allowing more trapped electrons to enter the conduction band and increase the current in the presence of enhanced thermal excitation.