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基于界面陷阱的定义 ,通过分别对亚阈值摆幅漂移和亚阈区栅电压漂移采用弛豫谱技术有效地提取了1.9nm MOS结构中的界面陷阱密度和它的能量分布 .发现这两种方法提取的界面陷阱密度的能量分布是自洽的 ,同时也与文献报道的 DCIV等方法的结果是一致的 .与其它的提取方法相比 ,采用弛豫谱技术的这两种方法更加简单和方便 .
Based on the definition of interface traps, the trap density and its energy distribution in the 1.9nm MOS structure are effectively extracted by using the relaxation spectrum technique for the subthreshold swing and the sub-threshold gate voltage drift, respectively. It is found that these two methods The energy distribution of trap density at the interface is self-consistent, and is also consistent with the results of DCIV reported in the literature.Compared with other extraction methods, these two methods using relaxation spectrum are more simple and convenient .