采用HVPE法,通过改变V/Ⅲ生长厚层GaN基片。分别采用X射线双晶衍射摇摆曲线、拉曼光谱及扫描探针显微镜进行生长晶体结晶质量和显微形貌分析。生长出表面光亮、无坑、无裂痕的60μm以上厚层GaN基片,并简要介绍厚层GaN基片生长过程中V/Ⅲ影响成核岛演变的规律。 HVPE method is used to grow thick GaN substrate by changing V / III. The crystal quality and microstructure of growing crystal were analyzed by X-ray double crystal diffraction rocking curve, Raman spectroscopy and scanning probe microscope respectively. Growth of a bright, non-pit and crack-free thick GaN substrate with a thickness of more than 60μm was also discussed. The evolution of V / Ⅲ affecting the nucleation of the island during the growth of thick GaN substrate was briefly introduced.