为满足236U核数据测量需求,需在2μm厚的带靶框Al衬底上电镀236U,要求靶厚1～30μg/cm2。为此,本工作开展了分子镀制备236U靶的方法研究。首先加工了沉积槽、电极与所有沉积垫片,并将原来所用玻璃沉积槽改为Teflon沉积槽,建立了一套沉积装置。利用该装置,以235U为指示剂,研究了沉积条件对制备U靶的影响,建立了分 In order to meet the needs of 236U nuclear data measurement, it needs to electroplate 236U on the 2μm-thick Al substrate with a target frame, and the target thickness is 1 ~ 30μg / cm2. To this end, this work carried out molecular plating preparation of 236U target method. The deposition tank, the electrode and all the deposition pads were processed first, and the original glass deposition tank was changed to a Teflon deposition tank to establish a deposition device. Using this device, with 235U as indicator, studied the deposition conditions on the preparation of U target, the establishment of the sub