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对n-Si低剂量(10~(11)cm~(-2))B~+和P~+离子注入产生的电子和空穴陷阱及其热退火行为.用DLTS方法作了迄今最完整的研究.首次报道了空穴陷阱.注B~+引入五种空穴陷阱:高浓度的H_2(0.62)和H_3(0.43)两种可能与B有关的受主陷阱,还有H_4(0.37),H_1(0.63)和H_5(0.15),H_4可能是与C有关的受主缺陷,注 P~+引入四种空穴陷阱:高浓度的H_2~″(0.51),也引入H_4(0.37),H_2(0.63)和类似H_5的H_3~″.同时报道了注B~+引入七种和注P~+引入三种电子陷阱.注B~+引入可能与B有关的受主E_3(0.35),在280℃退火时有高浓度,在320℃退火后激烈退化.另外三种E_2(0.41),E_4(0.25),E_5(0.15)在注B~+和注P~+情况都测到,并基本符合过去离子、中子或电子辐照普遍报道的缺陷能级.研究了上述所有缺陷的退火行为,在800℃退火后,所有缺陷都退至 10~(12)cm~(-3)平均浓度以下.
The electron and hole traps and the thermal annealing behavior of n-Si low dose (10 ~ (11) cm ~ (-2)) B ~ + and P ~ + ion implantation were studied by DLTS method Hole traps were reported for the first time.Note that five kinds of hole traps were introduced into B ~ +: two kinds of acceptor traps possibly associated with B, such as H 2 (0.62) and H 3 (0.43) H_1 (0.63) and H_5 (0.15), H_4 may be acceptor defects related to C, and four kinds of hole traps were introduced into P ~ +: H_2 ~ "0.51 and H_4 0.37, (0.63) and H_3 ~ similar to H_5. We also report that three kinds of electron traps are introduced into B ~ + and P ~ +, and B ~ + is introduced into E_3 (0.35) High concentration at 280 ℃ annealed and intense degeneration after annealed at 320 ℃ .The other three E_2 (0.41), E_4 (0.25) and E_5 (0.15) were measured in both B + and P + Which is in accordance with the defect levels generally reported in the past by ion, neutron or electron irradiation.All the above defects were annealed and annealed at 800 ℃, all defects retreated to an average concentration of 10 ~ (12) cm ~ (-3) the following.