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应用腔量子电动力学和半导体物理学讨论了半导体垂直腔面发射激光器的微腔效应 ,得到了实际腔结构和注入载流子下的半导体垂直腔面发射激光器的自发发射谱 ,计算结果表明 ,半导体分布布拉格反射垂直腔激光器的单方向自发发射可以增强约 2 0 0倍。
The microcavity effect of a semiconductor vertical cavity surface emitting laser is discussed by using cavity quantum electrodynamics and semiconductor physics. The actual cavity structure and the spontaneous emission spectrum of a semiconductor vertical cavity surface emitting laser with an injected carrier are obtained. The calculated results show that the semiconductor Unidirectional spontaneous emission of distributed Bragg reflector vertical-cavity lasers can be enhanced by about 200 times.