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本文利用共振核反应定量地确定了LPCVD氮化硅敏感膜中,氢原子浓度及其分布.我们不仅证实了在825℃温度下,淀积的氮化硅敏感膜内存在氢原子,而且敏感膜表面所存在氢原子浓度为8—16×10~(21)cm~(-3),它高于敏感膜体内,其体内的氢原子浓度为2-3×10~(21)cm~(-3),而且敏感膜表面氢原子浓度大小与膜表面的制备条件密切相关,同时我们还利用傅利叶交换红外透射吸收光谱,确定了LPCVD氨化硅敏感膜中存在Si-O(1106cm~(-1))N-H(1200cm~(-1)),Si-H(2258cm~(-1))和N-H(3349cm~(-1))的化学键配位结构.敏感膜表面氧的存在严重地影响ISFET的能斯特响应和线性范围,而敏感膜表面的Si-H,N-H和N-Si 的化学键结构存在,有利于改善pH-ISFET 的灵敏度和线性范围.
In this paper, the resonance nuclear reaction was used to quantitatively determine the concentration and distribution of hydrogen atoms in the LPCVD silicon nitride sensitive film.We not only confirmed the presence of hydrogen atoms in the silicon nitride sensitive film deposited at 825 ℃, but also the surface of the sensitive film The concentration of hydrogen atoms is 8-16 × 10 ~ (21) cm ~ (-3), which is higher than that of the sensitive membrane. The concentration of hydrogen atoms in the membrane is 2-3 × 10 ~ (21) cm ~ (-3) ), And the concentration of hydrogen atoms on the surface of the sensitive membrane is closely related to the preparation conditions of the membrane surface. Meanwhile, Fourier transform infrared transmission absorption spectroscopy was also used to determine the presence of Si-O (1106 cm -1) in the LPCVD- ) NH (1200cm -1), Si-H (2258cm -1) and NH (3349cm -1) .The existence of oxygen on the surface of sensitive membrane seriously affects the energy of ISFET And the linear range, the presence of Si-H, NH and N-Si chemical bonds on the surface of the sensitive membrane can improve the sensitivity and linearity of the pH-ISFET.