论文部分内容阅读
本文对30keV Si~+和分子离子S_1F~+注入半绝缘GaAs的行为进行了研,究注入Si~+样品的Si原子纵向分布,与相同条件下用SICT模拟程序理论计算出的分布相一致,经灯光900℃10秒RTA,电激活率可达60％,电化学C—V测得的载流子纵向分布与注入态SIMS结果相同,可以获得近0.2μm的GaAS有源层。而注入分子离子SiF~+样品,虽注入层较浅,但灯光退火后,电激活率很低。因此,用分子离子SiF~+注入以形成GaAs超薄有源层是不相宜的。此外,根据X—射线双晶衍射的结果还对GaAs注入Si~+和SiF~+的退火行为进行了讨论。
In this paper, the behavior of semi-insulating GaAs implanted with 30 KeV Si ~ + and molecular ions S_1F ~ + was studied. The longitudinal distribution of Si atoms implanted into Si ~ + samples was consistent with that calculated by SICT simulation program under the same conditions. The electrical activation rate can reach 60% at 900 ℃ for 10 seconds RTA. The longitudinal distribution of carriers measured by electrochemical C-V is the same as that of SIMS. The GaAs active layer with the thickness of 0.2μm can be obtained. While injecting molecular ion SiF ~ + samples, although the injection layer is shallow, but the light annealing, the electrical activation rate is very low. Therefore, it is unfavorable to implant Si ions into the GaAs thin active layer. In addition, the annealing behavior of GaAs implanted Si ~ + and SiF ~ + is also discussed based on the results of X-ray double crystal diffraction.