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高密度、图形规则的硅点阵结构由于其独特的光电性能具有广泛的应用前景。本文介绍了一种以低压压印结合反应离子刻蚀制备硅点阵的方法,即利用PDMS模板通过压印复制获得PMMA掩模结构,用反应离子刻蚀在硅片表面制得高度有序的硅纳米点阵结构。实验和有限元模拟结果表明,低压压印因为毛细作用下光刻胶在模板内的充分填充可以获得良好的图形复制精度和较小的残余胶厚度,因此适于大面积高密度光刻胶结构的均匀复制。
Due to its unique optoelectronic properties, the high-density, regular-shaped silicon lattice structure has a wide range of applications. In this paper, a method for preparing a silicon lattice by low pressure embossing combined with reactive ion etching is presented. The PMMA mask structure is obtained by imprinting and copying using a PDMS template. Reactive ion etching is used to form a highly ordered Silicon nano lattice structure. Experiments and finite element simulation results show that the low-pressure imprinting can obtain good pattern replication accuracy and smaller residual glue thickness because of sufficient filling of the photoresist in the template under the capillary action. Therefore, it is suitable for large-area high-density photoresist structures Uniform copy.