一、引言目前,晶体管自激振荡电路引起了人们广泛的兴趣,并且已经在许多方面获得了实际的应用。但是,对它的分析工作以及电路中实际过程的研究还远不及电子管振荡器来得深入。现在,最普遍的是采用网络分析的方法来讨论。这种方法的确解决了一些计算和分析上的问题,但对电路中的物理过程反映得不够明确,若要求更进一步地考虑晶体管的非线性效应,则将变得十分复杂。因此,近年来有些人已开始用一般的振动理论方法,通过微分方程(线性的或者非线性的)来讨论晶体管的自激振荡特性。不过,大部分分析仅限于电路在低频时的工作情况。因为,在这些讨论中并未考虑到晶体管中的载流子扩散时间以及发射极结和收集极结电容的影响,即未考虑到出现在集电极和发射极间的相移效应。所以,当接近于晶体管最高振荡频率附近时电路的性能是无法决定的。为了反映晶体管的这个特性,通常以复数形式来表达它的电流传输系数: First, the introduction At present, the transistor self-excited oscillation circuit has aroused widespread interest, and has gained practical application in many ways. However, the analysis of its work and the actual process in the circuit is far less advanced than the tube oscillator. Now, the most common method is to use network analysis to discuss. This method does solve some computational and analytical problems, but does not reflect the physical processes in the circuit clearly enough. It will become very complicated if the non-linear effects of transistors are required to be further considered. Therefore, in recent years, some people have begun to discuss the self-oscillating characteristics of transistors by the general vibration theory method through differential equations (linear or non-linear). However, most of the analysis is limited to the operation of the circuit at low frequencies. Because, in these discussions, the carrier diffusion time in the transistor and the effect of the emitter junction and collector junction capacitance are not taken into consideration, ie the phase shift effect occurring between the collector and the emitter is not taken into account. Therefore, the performance of the circuit can not be determined when it is close to the highest oscillation frequency of the transistor. In order to reflect this characteristic of the transistor, its current transfer coefficient is usually expressed in the plural form: