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以全球信息产业需求及技术发展为背景,回顾了以能带工程为基础的、在现代通信领域得到广泛应用的SiGe异质结晶体管技术的发展历程。介绍了分子束外延、超高真空化学气象淀积和常压化学气象淀积3种典型的SiGe外延技术并对比了这三种技术的优缺点。在此基础上,对SiGe HBT技术进行了分析总结并列举了其典型技术应用。以IBM的SiGe BiCMOS技术为例,介绍了目前主流的SiGe异质结晶体管技术-SiGe BiCMOS技术的研究现状及典型技术产品。最后对正在发展中的SiGe FET技术做了简要介绍。在回顾了SiGe异质结晶体管技术发展的同时,认为未来SiGe异质结晶体管技术的提高将主要依赖于超薄SiGe基区外延技术。
Taking the global information industry demand and technological development as a background, the development history of SiGe heterojunction transistor technology based on energy band engineering and widely used in the field of modern communications is reviewed. Three kinds of typical SiGe epitaxial techniques, including molecular beam epitaxy, ultra-high vacuum chemical vapor deposition and atmospheric chemical vapor deposition, are introduced and the advantages and disadvantages of these three technologies are compared. On this basis, the SiGe HBT technology is analyzed and summarized and its typical technical applications are listed. Taking IBM’s SiGe BiCMOS technology as an example, the current research status and typical technical products of SiGe BiCMOS technology, the mainstream SiGe heterojunction transistor technology, are introduced. Finally, the developing SiGe FET technology is briefly introduced. While reviewing the development of SiGe heterojunction transistor technology, it is considered that the future improvement of SiGe heterojunction transistor technology will mainly depend on the ultra-thin SiGe base-region epitaxy technology.