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应用耿效应电子学结合气体放电理论系统研究了高增益砷化镓(GaAs)光导开关(PCSS)的工作机理,提出了以畴电子崩为基础的流注模型,阐述了畴电子崩概念及其物理意义和高增益GaAs光导开关中载流子的输运过程,阐明了光导开关中光致电离的效应和畴电子崩可能导致集体碰撞电离在局域引发雪崩现象,分析了流注形成的临界条件,导出了流注维持发展的临界条件解析表达式,揭示了与非线性模式(lock-on效应)密切联系的流注的形成和发展的一般规律.应用这个模型合理解释了高增益GaAs光导开关的实验结果、非线性现象中流注快速发展和电流的上升时间很快的物理原因,以及非线性模式的发展过程中的各种现象。
The working mechanism of GaAs photoconductive switch (PCSS) with high gain is studied by using Geng effect electron combinative gas discharge theory system. A flow injection model based on domain electron collapse is proposed. The concept of domain electron collapse and its Physical meaning and carrier transport in GaAs photoconductive switches with high gain. The effects of photoionization and domain electronic collapse in photoconductive switches are explained. It is possible that collective collision ionization can cause avalanches in the local area, and the threshold of flow injection formation is analyzed. Conditions, we derive analytical expressions of the critical conditions for the development of the flow sustaining, and reveal the general rules for the formation and development of the flow injection that is closely related to the lock-on effect. The model is used to explain the high-gain GaAs photoconductors The experimental results of the switch, the physical reasons for the rapid development of current injection in non-linear phenomena and the rapid rise of current, and various phenomena in the development of nonlinear mode.